logo

3DD167E

INCHANGE
Part Number 3DD167E
Manufacturer INCHANGE
Title NPN Transistor
Description ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust ...
Features PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 10mA; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A;...

Datasheet PDF File 3DD167E Datasheet

3DD167E   3DD167E   3DD167E  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map