logo

3DD159E

INCHANGE
Part Number 3DD159E
Manufacturer INCHANGE
Title NPN Transistor
Description ·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust ...
Features ARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 3mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 3mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB...

Datasheet PDF File 3DD159E Datasheet

3DD159E   3DD159E   3DD159E  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map