| Part Number | 3DD13009N |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable o... |
| Features |
Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A ;IB= 1.6A
VBE(sat) Base-Em...
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| Datasheet |
 3DD13009N Datasheet
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