| Part Number | 2SD970 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Saturation Voltage ·Complement to ... |
| Features |
(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; RBE= ∞
120
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
7
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA
1.5
V
VCE(sat)-2 Collector-Emitter Saturation Volt...
|
| Datasheet |
 2SD970 Datasheet
|
