| Part Number | 2SD962 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·High DC Current Gain ·High Reliability ·Good Linearity of hFE ·Wide Area of Saf... |
| Features |
ess otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 3mA; IC= 0
VCE(sat)-1 Colle...
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| Datasheet |
 2SD962 Datasheet
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