| Part Number | 2SD917 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 330V(Min) ·High Power Dissipation ·High Switching Speed ·Minimum Lot-to-Lot variations for rob... |
| Features |
er Breakdown Voltage IC= 10mA ; IB= 0
200
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
1.0
V
VBE(sat) Base -Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.2
V
ICES
Collector Cutoff Current
VCE= 330V ; VBE= 0 VCE= 300V; ...
|
| Datasheet |
 2SD917 Datasheet
|
