| Part Number | 2SD895 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 85V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Complemen... |
| Features |
IC= 30mA ; RBE=∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VBE(on) ICBO
Base -Emitter On Voltage Collector Cu...
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| Datasheet |
 2SD895 Datasheet
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