Part Number | 2SD753 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·High Current Capability ·Complement t... |
Features |
Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(on) Base -Emi...
|
Datasheet | 2SD753 Datasheet |