Part Number | 2SD640 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V (Max.)@ IC= 5A ·Excellent... |
Features |
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 500V; I...
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Datasheet | 2SD640 Datasheet |