| Part Number | 2SD556 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V (Min) ·Wide Area of Safe Operation ·High Power ·High Current Capability ·Minimum Lot-to-Lot... |
| Features |
r-Emitter Breakdown Voltage IC= 10mA ; IB= 0
110
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEB...
|
| Datasheet |
 2SD556 Datasheet
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