| Part Number | 2SD555 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V (Min) ·High Power Dissipation ·Complement to Type 2SB600 ·Minimum Lot-to-Lot variations for... |
| Features |
1A
ICBO
Collector Cutoff Current
VCB= 200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 50mA; VCE= 5V
hFE-2
DC Current Gain
IC= 2A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Curre...
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| Datasheet |
 2SD555 Datasheet
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