| Part Number | 2SD552 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V (Min) ·High Power Dissipation ·Complement to Type 2SB552 ·Minimum Lot-to-Lot variations for... |
| Features |
age
Breakdown
CONDITIONS IC= 10mA; RBE= 0
V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VBE(sat) Base-Emitter Satur...
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| Datasheet |
 2SD552 Datasheet
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