| Part Number | 2SD2561 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturatio... |
| Features |
rwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A; IB= 10mA
ICBO
Collect...
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| Datasheet |
 2SD2561 Datasheet
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