| Part Number | 2SD256 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 40V(Min) ·Collector Power Dissipation- : PC= 25W @TC= 25℃ ·Minimum Lot-to-Lot variations for ro... |
| Features |
T
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0
40
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A
2.0
V
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 4V
1.8
V
ICBO
Collector Cutoff Current
VCB= 60V; VEB...
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| Datasheet |
 2SD256 Datasheet
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