| Part Number | 2SD2398 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae: VCE(sa... |
| Features |
fied
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
100
V
V(BR)CBO Collector-Base Breakdown Voltage
IC=50uA; IE= 0
100
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 3mA; IC= 0
5...
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| Datasheet |
 2SD2398 Datasheet
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