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2SD2396

INCHANGE
Part Number 2SD2396
Manufacturer INCHANGE
Title NPN Transistor
Description ·Low Collector Saturation Voltage ·High DC current gain ·Large collector power dissipation ·Minimum Lot-to-Lot variations for robust device perfor...
Features ctor-Emitter Saturation Voltage IC= 2A; IB= 0.05A VBE(sat)* Base-Emitter Saturation Voltage IC= 2A; IB= 0.05A ICBO Collector Cutoff Current VCB= 60V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE* DC Current Gain IC= 0.5A ; VCE= 4V ...

Datasheet PDF File 2SD2396 Datasheet

2SD2396   2SD2396   2SD2396  




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