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2SD2293

INCHANGE
Part Number 2SD2293
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage : VCBO= 1500V(Min) ·High Switching Speed ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performan...
Features IC= 1mA; IE= 0 1500 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞ 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 350mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.8A 5.0 V VBE(sat) Base-E...

Datasheet PDF File 2SD2293 Datasheet

2SD2293   2SD2293   2SD2293  




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