| Part Number | 2SD2275 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 4A, VCE= 5V) ·Low Collector Saturation... |
| Features |
ise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 4mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 4mA
ICBO
Collector Cuto...
|
| Datasheet |
 2SD2275 Datasheet
|
