| Part Number | 2SD2232 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·High DC Current Gain : hFE= 3000(Min) @ IC= 5A, VCE= 2V ·Minimum Lot-to-Lot vari... |
| Features |
YMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 10mA
VECF
C-E Diode Forward Voltage
...
|
| Datasheet |
 2SD2232 Datasheet
|
