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2SD1941

INCHANGE
Part Number 2SD1941
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable opera...
Features EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICES Collector Cutoff Current VCE= 1200V; RBE= 0 hFE DC Current Gain IC= ...

Datasheet PDF File 2SD1941 Datasheet 211.22KB

2SD1941   2SD1941   2SD1941  




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