| Part Number | 2SD1941 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable opera... |
| Features |
EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1A
ICES
Collector Cutoff Current
VCE= 1200V; RBE= 0
hFE
DC Current Gain
IC= ...
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| Datasheet |
 2SD1941 Datasheet 211.22KB |
