| Part Number | 2SD1888 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1339... |
| Features |
T
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
120
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
ICBO
Collector Cutoff Current
VCB= 12...
|
| Datasheet |
 2SD1888 Datasheet 206.19KB |
