| Part Number | 2SD1856 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain : hFE= 2000(Min) @IC= 2A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 2A ·Bullt-in damper diode ·Minimum L... |
| Features |
erwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
MIN TYP. MAX UNIT
50
70
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
50
70
V
VCE(sat) Collector-Emitter Saturation ...
|
| Datasheet |
 2SD1856 Datasheet 184.58KB |
