| Part Number | 2SD1847 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Base Breakdown Voltage- : VCBO= 1300V (Min.) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust dev... |
| Features |
n Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 4A; IB= 1A
VCB= 750V; IE= 0 VCB= 1300V; IE= 0
IC= 1A; VCE...
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| Datasheet |
 2SD1847 Datasheet 211.81KB |
