Part Number | 2SD1764 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High DC Current Gain : hFE= 1000(Min) @IC= 1A ·Low Collector Saturation Voltgae- : VCE(sat)= 1.5V(Max.)@ IC= 1A ·Bullt-in damper diode ·Minimum L... |
Features |
erwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0
MIN TYP. MAX UNIT
50
70
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA; IE= 0
50
70
V
VCE(sat) Collector-Emitter Saturation ...
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Datasheet | 2SD1764 Datasheet |