| Part Number | 2SD1609 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·100% avalanche tested ·Complement to Type 2SB1109 ·Minimu... |
| Features |
NS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0.1mA ; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Vltage
IE=0.1mA ; IC=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 30mA; IB= 3mA
...
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| Datasheet |
 2SD1609 Datasheet
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