Part Number | 2SD1417 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation Vo... |
Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA
VBE(...
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Datasheet | 2SD1417 Datasheet |