| Part Number | 2SD1416 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Darlington Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current G... |
| Features |
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
80
V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
1.5
V
VCE(sat)-2 Collector-Emitter S...
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| Datasheet |
 2SD1416 Datasheet
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