| Part Number | 2SD1409 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot varia... |
| Features |
(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
400
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA
2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 40mA
2.5
V
VECF
C-E Diode Forward Voltage
IF= 4A
...
|
| Datasheet |
 2SD1409 Datasheet
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