| Part Number | 2SD1386 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 4A ·Low Saturation Voltage ·100% avalanche... |
| Features |
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 6mA
VCE(sat)-2 Collector-Emitter Saturatio...
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| Datasheet |
 2SD1386 Datasheet
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