Part Number | 2SD1309 |
Manufacturer | INCHANGE |
Title | Silicon NPN Darlington Power Transistor |
Description | ·High DC Current Gain :hFE= 2000(Min) @ IC= 3A ·Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V (Min) ·Low Collector-Emitter Saturation Vol... |
Features |
CS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= ...
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Datasheet | 2SD1309 Datasheet |