| Part Number | 2SD1278 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Reliability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance... |
| Features |
er-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.5A
10
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 1.5A
...
|
| Datasheet |
 2SD1278 Datasheet
|
