| Part Number | 2SD1276 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·High Speed Switching ·Complement to Type 2SB950 ·100% avalanche tested ·Minimum Lot-t... |
| Features |
ied
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat) -1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat) -2 Collector-Emitter Saturation Voltage IC= 5A; IB= 20mA
VBE(on) Base-Emitt...
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| Datasheet |
 2SD1276 Datasheet
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