| Part Number | 2SD1264 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 150V(Min) ·High Collector Power Dissipation ·Complement to Type 2SB940 ·Minimum Lot-to-Lot variat... |
| Features |
oltage IC= 5mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 100μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 0.4A;...
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| Datasheet |
 2SD1264 Datasheet 211.04KB |
