Part Number | 2SD1210 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High DC Current Gain : hFE= 1000(Min.)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Minimum Lot-to-Lot variations for... |
Features |
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SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 10A, IB= 25mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 10A, IB= 25mA
ICBO
Collector Cutoff current
VCB= 100V, IE= 0
IEBO
Emitter Cutoff Current
VEB= 8V; ...
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Datasheet | 2SD1210 Datasheet 210.86KB |