Part Number | 2SD114 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reli... |
Features |
BOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC=7.5A; IB=0.75A
VBE(sat) Base-Emitter Saturation Voltage
IC=7.5A; IB=0.75A
VBE(on) Base-Emitter On Voltage
I...
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Datasheet | 2SD114 Datasheet |