Part Number | 2SD1114 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 4A ·100% avalanche tested ·Minimum Lot-to... |
Features |
ER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA; IC= 0
V(BR)CBO
Collector - Base Breakdown Voltage IC= 0.1mA; IE= 0
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= ...
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Datasheet | 2SD1114 Datasheet |