| Part Number | 2SD1110 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·Complement to Type 2SB849 ·Minimum Lot-to-Lot variations for r... |
| Features |
r Saturation Voltage
IC= 5.0A; IB= 0.5A
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 3V; IC= 0
hFE-1
DC Current Gain
IC= 50mA; VCE= 5V
hFE-2
DC Current Gain
IC= 1A; VCE= 5V
COB
Output Capacitance
IE=...
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| Datasheet |
 2SD1110 Datasheet
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