| Part Number | 2SD1070 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations fo... |
| Features |
ollector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(on) Base -Emitter On Voltage
IC= 5A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 20mA; VCE= 5V
hFE-2
...
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| Datasheet |
 2SD1070 Datasheet
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