logo

2SD1016

INCHANGE
Part Number 2SD1016
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Collector-Base Voltage- : VCBO= 1500V(Min) ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device ...
Features ss otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.0 V VBE(sat) Base-Emitter Saturat...

Datasheet PDF File 2SD1016 Datasheet

2SD1016   2SD1016   2SD1016  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map