| Part Number | 2SC5417 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·NPN triple diffused planar silicon transistor ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device per... |
| Features |
nless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
...
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| Datasheet |
 2SC5417 Datasheet
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