| Part Number | 2SC3376 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | · ·Collector-Emiiter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device perfor... |
| Features |
reakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A
VBE(sat) Base-Emitter Saturation Voltage
IC= 0.8A; IB= 0.16A
ICBO
Collector Cutoff Curr...
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| Datasheet |
 2SC3376 Datasheet
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