| Part Number | 2SB886 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High DC Current Gain- : hFE = 1500(Min)@ IC= -4A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@... |
| Features |
ARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA, IE= 0
VCE(sat) Collector-Emitter Saturation Voltage ...
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| Datasheet |
 2SB886 Datasheet
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