| Part Number | 2SB812 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High Power Dissipation ·Complement to Type 2SD1032 ·Minimum Lot-to-Lot variations for... |
| Features |
e IC= -4A; IB= -0.4A
VBE(on) Base -Emitter On Voltage
IC= -3A; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
ICES
Collector Cutoff Current
VCE= -60V; VBE= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -3A...
|
| Datasheet |
 2SB812 Datasheet
|
