| Part Number | 2SB1106 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE=1000(Min)@ (VCE= -3V, IC= -3A) ·Minimum Lot-to-Lot varia... |
| Features |
BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -6A; IB= -60mA
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -3A; IB= -6...
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| Datasheet |
 2SB1106 Datasheet
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