Part Number | 2SB1105 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -1.5A) ·Complement to Type 2S... |
Features |
Voltage IC= -25mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA
VBE(sat)-1 Base-Emitter Sa...
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Datasheet | 2SB1105 Datasheet |