Part Number | 2SB1101 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -2A) ·Complement to Type 2SD16... |
Features |
age IC= -30mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -5mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2A; IB= -4mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB= -40mA
VBE(sat)-1 Base-Emitter Saturation...
|
Datasheet | 2SB1101 Datasheet |