Part Number | 4AM11 |
Manufacturer | Hitachi Semiconductor |
Title | Silicon N-Channel/P-Channel Power MOS FET Array |
Description | 4AM11 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0... |
Features |
• Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • • • • • Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor... |
Datasheet | 4AM11 Datasheet |