| Part Number | 2SK3229 |
| Manufacturer | Hitachi Semiconductor |
| Title | N-Channel MOSFET |
| Description | 2SK3229 Silicon N Channel MOS FET High Speed Power Switching ADE-208-766(Z) Target specification 1st. Edition December 1998 Features • Low on-res... |
| Features |
• Low on-resistance R DS(on) =6mΩ typ. • Low drive current • 4V gate drive device can be driven from 5V source Outline TO –220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK3229 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage G... |
| Datasheet |
 2SK3229 Datasheet
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