| Part Number | GS-065-004-1-L |
| Manufacturer | GaN Systems |
| Title | 650V E-mode GaN transistor |
| Description | The GS-065-004-1-L is an enhancement mode GaN-onSilicon power transistor. The properties of GaN allow for high current, high voltage breakdown and... |
| Features |
• 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 450 mΩ • IDSmax,DC = 4 A / IDSmax,Pulse = 7.1 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) •... |
| Datasheet |
 GS-065-004-1-L Datasheet
|
