| Part Number | LPD200SOT343 |
| Manufacturer | Filtronic Compound Semiconductors |
| Title | PACKAGED HIGH DYNAMIC RANGE PHEMT |
| Description | AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transis... |
| Features |
♦ 0.6 dB Noise Figure at 2 GHz ♦ 15.5 dBm P-1dB 2 GHz, 16.5 dBm at 6 GHz ♦ 21 dB Power Gain at 2 GHz, 10.5 dB at 6GHz ♦ 50% Power-Added-Efficiency at 2 GHz
• DESCRIPTION AND APPLICATIONS The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium A... |
| Datasheet |
 LPD200SOT343 Datasheet
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